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第29卷第1期 半导体学报 V01.29No.1
2008年1月 JOURNALOFSEMICoNDUCToRS Jan.,2008
A12~18GHzWideBand on
VCOBased
Quasi-MMIC
M0
WangShaodong’,Ga0Xuebang,WuHongjiang,WangXiangwei,andLidong
SemiconductorResearch
(Hebei 050051,China)
Institute,Shijiazhuang
anin—houseMMICandan varactor,anovelwidebandVCOcoveredKubandisin—
Abstract:Using off—chip,high—quality
troduced.In
contrasttoHMIC methodreducesthe of
microchip
technology.this complexity assembly.Moreimportantly.it
overcomestheconstraintthatthestandardcommercialGaAs MMIC is not with
pHEMTprocessusuallycompatiblehigh.
varactorsfor it the
VCO,and noiseand com—
quality significantlyimprovesphase frequencytuninglinearityperformances
toeitherMMICorHMIC isanoveland methodto microwaveandmillime-
pared implementation.Ithigh—quality develop
terwaveVCO.
words:MMIC;wide-band;VCO;Kuvaractor;bond-wireinductor
Key band;off—chip
EEACC:1350T;1350H
CLC Document Article
number:TN432 code:A ID:0253—4177(2008)01.0063.06
100GHzhavebeen inrecent
reported
1 Introduction
er,itisdifficulttofabricate varactordi.
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