氮分压对ta–n薄膜摩擦性能的影响-ingentaconnect.pdfVIP

第 39 卷第 5 期 李孟伟 等：不同层 Cu/ZrW O 梯度薄膜的制备和性能 · 843 · 2 8 第 39 卷第 5 期 硅 酸 盐 学 报 Vol. 39 ，No. 5 2 0 1 1 年 5 月 JOURNAL OF THE CHINESE CERAMIC SOCIETY M a y ， 2 0 1 1 氮分压对Ta–N 薄膜摩擦性能的影响 严学华，尹 君，程晓农 (江苏大学材料科学与工程学院，江苏 镇江 212013) 摘 要：在氮气和氩气的混合气氛中，在不同 N2 分压下，用直流磁控溅射法在 Si 基片上沉积非晶态 Ta–N 薄膜。利用 X 射线衍射仪、原子力显微镜、 台阶仪和纳米压痕仪、光学轮廓仪和扫描电子显微镜对沉积的薄膜进行表征。结果表明：不同 N2 分压下沉积的薄膜都有平整且致密的表面，表面均 方根粗糙度都较小；随着 N2 分压的上升，薄膜沉积速率、纳米硬度和弹性模量都随之下降。所制备薄膜在室温、空气环境中具有稳定的滑动摩擦因 数；当 N2 分压为混合气体的 10%(体积分数) 时，薄膜的摩擦因数最低，仅为 0.27，但由于硬度较低，其磨损也相对较为严重。 关键词：氮化钽薄膜；纳米硬度；弹性模量；表面形貌；摩擦性能 中图分类号：TB333 文献标志码：A 文章编号：0454–5648(2011)05–0843–06 Effects of N Partial Pressure on Tribological Properties of Ta–N Thin Films 2 YAN Xuehua，YIN Jun，CHENG Xiaonong (School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu, China) Abstract: The amorphous Ta–N thin films were deposited by direct current magnetron sputtering on silicon wafer with different N2 partial pressures in N2/Ar atmosphere. The as-prepared thin films were characterized by X-ray diffractometer, atomic force micro- scope, nanoindenter, friction test instrument, optical profilograph and scanning electron microscope. The results show that the thin films sputtered with different N2 partial pressures are smooth, dense and have smaller root mean square roughness. The depositing rate, nano-hardness and elastic modulus of the as-prepared thin films decreases with the increase of N2 partial pressure. The friction factor of the films is stable at room temperature in air. When the N2 partial pressure is 10% in volume