基于分子动力学的石墨炔纳米带空位缺陷的导热特性.pdfVIP

基于分子动力学的石墨炔纳米带空位缺陷的导热特性 兰生 李焜 高新昀 Based onthe moleculardynamics characteristicresearch of heat conduction of graphyne nanoribbons withvacancydefects LanSheng LiKun GaoXin-Yun 引用信息Citation: ActaPhysicaSinica, ,136801(2017) DOI: 10.7498/aps.66.136801 在线阅读Viewonline: /10.7498/aps.66.136801 当期内容Viewtableofcontents: /CN/Y2017/V66/I13 您可能感兴趣的其他文章 Articlesyoumaybeinterestedin 掺Fe高阻GaN缓冲层特性及其对AlGaN/GaN 高电子迁移率晶体管器件的影响研究 Growths of Fe-doped GaN high-resistivity buffer layers for AlGaN/GaN high electron mobility transistor devices