电子显微分析（章晓中）教学课件chapter9.pdfVIP

4.3 Kikuchi Lines (菊池线） In addition to the diffraction spots, single electron diffraction patterns often contain a complex pattern of lines known as Kikuchi line (because this phenomenon was found by Kikuchi in 1928) • Kikuchi lines are a series of bright and dark line pair. • Kikuchi lines occur when specimen is quite thick (0.1m). • Kikuchi lines involve both elastic and inelastic scattering. Kikuchi lines arise from the subsequent elastic scattering of electrons which suffer an inelastic collision involving only a small energy loss. Origin of Kikuchi lines Let the inelastic scattering occur at P, so that P becomes the origin of a spherical wavelet (波包）. The angular distribution of the inelastically scattered electrons is peaked in the direction of the incident beam, and the intensity of scattering decreases monotonically （单调地）with increasing angle of scattering. The inelastic scattering provides the main component of the background intensity of the diffraction pattern. Local variations in this background occur because rays travelling in certain directions from P are at the Bragg angle  for reflection by a set of crystal planes. The ray PQ will therefore be deflected into the direction QQ’, and the ray PR into the direction RR’. The intensity of the inelastically scattered electrons is greater along PQ than along PR, i.e. I I . Assume that c is the PQ PR reflection coefficient. I RR (I PQ cIPQ ) cIPR I PQ c(I PQ I PR ) I PQ Intensity decreased I QQ (I PR cIPR ) cIPQ I PR c(I PQ I PR ) I PR Intensity increased The background intensity is therefore increased along the PR direction and decreased along the PQ direction. • When al