电子显微分析（章晓中）教学课件chapter13.pdfVIP

(imperfect crystal) (perfect crystal) i t   i t 2isz 2i g R 2isz A e dz AD  e e dz g   0 0 g g   Additional phase factor e2i g R ei   i • When g R is integer or zero, e =1, The AD of the imperfect crystal is the same as the AD of the perfect crystal. No additional contrast is produced (we can’t ‘see’ the defect).   g R =0, 1, 2, 3… invisibility criterion of defects. 5.3 Diffraction contrast images of some common defects • stacking fault (层错） • dislocation （位错） • second phase particles (第二相粒子) • grain boundary （晶界） 5.3.1 Stacking fault in fcc materials • The normal atom arrangement of {111} planes in fcc materials is …ABCABCABC… • Two kinds of stacking fault: – Intrinsic stacking fault : removal of a layer of atoms followed by a collapse of the two crystals on either side of the fault. ABCACABC  – Extrinsic stacking fault : insertion of an extra layer of atoms pushing the two crystals apart. ….ABCACBCABC… Existence of stacking fault destroys the normal arrangement of neighbor atom layers, resulting in a displacement of atom layer (which can be described by the lattice translation vector R) B crystal 1 Fault plane crystal 2