ICP技术在LED领域的应用.pptVIP

Outline Introduction to LED? LED development trend LED construction process and control parameters Solutions to problems in manufacturing process. (Oxford solution) Future applications Introduction to LED GaN/Align Materials Blue, green and yellow 10cd InGaN LEDs available commercially since1995 Now available LEDs emitting the three primary colours… Red AlInGaP LEDs Green InGaN SQW LEDs Blue InGaN SQW LEDs Solid state white light sources LED full colour displays and projectors. OIPT Range Summary – Technologies OIPT Range Summary - RIE Plasmalab80plus Open load Up to 240mm Plasmalab800plus Open load Up to 380mm System100 Load-locked Up to 200mm System133 Load-locked Up to 300mm III-V Epitaxial Techniques III-V Epitaxial Techniques LED’s the future?? The newly forecasted market size is $3 billion by 2006. In spite of slow economic growth worldwide. (2). If mask residual at exposure area (3). If mask edge rough SiNx / SiOx Deposition Batch process High uniformity SiNx / SiOx RIE Processes Anisotropic 80Plus PECVD RIE system can solve your mask problem GaN (InGaAlN) - ‘The next generation material Characteristics N is difficult to incorporate (inert) No bulk substrate material Requires elevated temperature (1000oC) Doping is a challenge Excess Ga growth conditions Features Special active N sources High throughput pumping systems Ga drainage/collection High temperature stage Variations NH3 source 10-6 torr As, P, Sb Ga, In, Al MBE 10 to 760 torr AsH3, PH3, NH3 metalorganics MOVPE 760 torr AsCl3, AsH3 Ga, In VPE 760 torr As, P Ga, In, Al LPE Pressure Group V Group III Technique Reactants and Pressures MBE MOVPE VPE LPE Technique Relatively expensive system, throughput for thick structures, long maintenance time Super abrupt interface and uniformity, in-situ monitoring Expensive reactants, many parameters to control, hazards Flexible, high purity, high growth rates, optical monitoring, good interface control and uniformity No Al, Sb tough, hazards Simple,