氮化镓＆碳化矽-SEMIORG.PDFVIP

2017 功率半導體材料（氮化鎵＆碳化矽）應用元件國際論壇 2017 Symposium on High Power Semiconductor Materials (GaN SiC) and Devices 邀請 函 Invitation 次世代電力電子製造技術為全球製造業創新研究發展重點之一，矽基元件是過去幾十年來世界經濟 發展的重要推手，但由於矽 (Si)已接近其理論上的性能極限，寬能隙 (Wide Bandgap; WBG)半導體材料與 電力電子元件日趨重要，將成為次世代功率產品及應用重要的技術平台。 有鑑於我國學研界投入寬能隙與化合物半導體材料等功率模組相關研究多年，透過國際技術交流將 有助於我國功率電子相關產業技術精進與發展，因此本次研討會議特邀請國內外功率半導體產學機構， 包括 GaNSystems 、University of Texas at Austin 、長庚大學、穩懋半導體、台達電子 等專家進行專題演講，與國 內各界分享交流，在此，誠摯邀請您撥冗參加此盛會， 並藉此機會與國內相關產業先進作技術及經驗交 流，期能促成上下游廠商的合作結盟，紮根台灣，跨足國際 ！ The power electronics semiconductor manufacturing technology of next generation has been the global manufacturing innovation researching and developing emphasis. Si-based components are important for global economic development in last few decades. However, the performance of Si is almost approaching its theoretical limit; meanwhile, Wide Bandgap semiconductor components and power electronics components become more important, and will be the significant technological platform for power products and applications of next generation. Taiwan has been engaging in the development of power modules in semiconductor component such as Wide Bandgap and compounds for years from academic and research areas, founding a platform that provides technical information exchange and collaboration for international communities is important and necessary for the development and exceling of the power modules technology in related industries. We are honored to invite domestic and foreign experts in the industry and academia of power semiconductor, including GaNSystems, University of Texas at Austin, Chang Gung University, WIN Semiconductors Corp, and Delta Electronics, Inc to deliver lectures and share information.