磁控反应溅射AlN缓冲层对GaN基LED器件性能的影响-发光学报.PDFVIP

第36卷摇 第12期 发摇 光摇 学摇 报 Vol郾36 No郾12 2015年12月 CHINESEJOURNAL OF LUMINESCENCE Dec. ,2015 文章编号:1000鄄7032(2015)12鄄1452鄄06 磁控反应溅射AlN缓冲层对 GaN基LED器件性能的影响 * 农明涛,苗振林 ,梁智勇,周佐华,蔡炳杰,卢国军,林传强,张摇 宇 (湘能华磊光电股份有限公司,湖南 郴州摇 423000) 摘要:以直流磁控反应溅射法(RMS)在图形化蓝宝石衬底上制备的AlN薄膜作为缓冲层,采用金属有机化 学气相沉积法(MOCVD)外延生长了GaN基LED。 与MOCVD生长的低温GaN缓冲层相比,RMS制备的AlN 缓冲层具有表面更平整、颗粒更小的形核岛,有利于促进 GaN外延的横向生长,减少了形核岛合并时的界面 数量和高度差异,降低了缺陷和位错产生的几率。 研究结果表明,溅射AlN缓冲层取代传统低温GaN缓冲层 后,外延生长的GaN材料具有更高的晶体质量,LED器件在亮度、漏电和抗静电能力等光电特性上均有明显 提升。 关摇 键摇 词:直流磁控反应溅射;氮化铝缓冲层;氮化镓基发光二极管;金属有机化学气相沉积 中图分类号:TN303;TN304 摇 摇 摇 文献标识码:A摇 摇 摇 DOI:10.3788/ fgx1452 Effect of AlN Buffer Layer Prepared by Reactive Magnetron Sputtering on GaN鄄based LEDs * NONG Ming鄄tao,MIAOZhen鄄lin ,LIANGZhi鄄yong, ZHOU Zuo鄄hua,CAI Bing鄄jie,LU Guo鄄jun,LIN Chuan鄄qiang,ZHANG Yu (Xiangneng Hualei Optoelectronic Co. ,Ltd. ,Chenzhou423000,China) *Corresponding Author,E鄄mail:zhenlinmiao@163.com Abstract:AlNfilmswere prepared on patterned sapphire substrates (PSS) by direct鄄current reac鄄 tive magnetron sputtering (RMS) and used as buffer layers. The crystal quality and optical proper鄄 ties of GaNfilmsgrown by metal鄄organic chemical vapor deposition (MOCVD)with AlNbuffer lay鄄 ers wereinvestigated. Comparedwithconventionallow temperature GaNbufferlayers,theRMSAlN buffer layers have smoother and smaller nucleationislands,whichbenefitsthelateral growth andthe coalesce of three鄄dimensional GaN islands. It is found that GaN鄄based LEDs with RMS AlN buffer layers have higher light output power, lower electric leakage and stronger electrostati