modeling mos vlsi circuits for transient analysis英文电子书.pdf

276 IEEEJOURNAL OF SOLID-STATECIRCUITS,VOL. SC-21,NO. 2, APRIL1986 Modeling MOS VLSI Circuits for Transient Analysis PRASAD SUBRAMANIAM, MEMBER,IEEE Abstroet —Modeling plays a significant role in the efficient simulation nents. Modeling improvements can be made at both the of VLSI circuits. By simplifying the models used to analyze these circuits, device and the subcircuit level. In this paper, we discuss the it is possible to perform transient analyses with reasonable accuracy at modeling methods that have been used-in the second-gen- speeds of one or two orders of magnitude faster than in conventional eration MOTIS timing simulator [1], [21]. circuit simulation programs. In this paper, the author dkeusses the models that are nsed in the second-generation MOTIS timing simulator [1]. The It has been shown that in the simulation of large circuits, methods used have been applied to a wide variety of MOS digitaf in- a major portion of the total simulation time is spent in tegrated circuits. All MOS transistors are modeled as voltage-controlled evaluating the transistor models [6, p. 12]. In order to current sources using muftidlmensionaf tables. The actual currents are perform an efficient simulation, it is important that these computed by approximation rising variation-diminishing tensor splines. Nonlinear device capacitances in the circuit are approximated using linear models be compu