化学电池法于镀氮化锆膜矽基材上制备锆酸钡膜.PDFVIP

以新穎之低溫水熱-化學電池法於鍍氮化鋯膜矽基材上製備鋯酸鋇膜 防蝕工程　第二十二卷第二期　第73 ～ 82 頁　2008 年6 月 Journal of Chinese Corrosion Engineering, Vol. 22, No. 2, pp. 73 ~ 82 (2008) - 鄧煥平、揭由志、呂福興* Synthesis of BaZrO Films on ZrN-coated Si by a 3 Novel Low Temperature Hydrothermal-galvanic Couple Method Huan-Ping Teng, Yu-Chih Chieh, Fu-Hsing Lu* 本研究利用新穎之低溫水熱-化學電池法於鍍氮化鋯膜矽晶片上製備鋯酸鋇膜。氮化 鋯膜是以中空陰極放電式電漿離子法(HCD-IP)鍍著於矽晶片上，氮化鋯膜之厚度約為 660 nm 。將鍍氮化鋯膜矽晶片置於2 M 氫氧化鈉與0.5 M 醋酸鋇溶液中，在低於 100 °C 的溫度 條件下進行鋯酸鋇膜之製備。由X 光繞射之分析結果顯示，在70 °C 反應24 小時即可生成 立方相鋯酸鋇。由場發射掃描式電子顯微鏡觀察表面與橫截面形貌，發現隨反應時間增加， 鋯酸鋇晶粒與厚度有增加趨勢。以 90 °C 反應 8 小時後，所生成鋯酸鋇之膜厚約0.8 µm ， 而反應 15 小時後，大部分之氮化鋯膜均已轉變為鋯酸鋇膜，膜厚可達 2 µm 。本研究亦對 鋯酸鋇膜之成長與反應溫度與時間之關係做探討。 關鍵字：鋯酸鋇膜；氮化鋯；低溫水熱-化學電池法。 ABSTRACT The objective is to prepare barium zirconate (BaZrO , BZO) films on ZrN-coated Si by a 3 novel low temperature hydrothermal-galvanic couple method. Zirconium nitride films were deposited on Si substrates by hollow cathode discharge plasma ion plating (HCD-IP) and were 660 nm in thickness. ZrN-coated Si specimens were then soaked in Ba(CH COO) and NaOH mixed 3 2 alkaline solutions with a galvanic couple setup below 100 °C for fabrication of BZO films. X-ray diffraction results show that cubic BZO films were successfully prepared on ZrN/Si at 70 °C for 24 h. The morphology of obtained BZO films was examined b