半导体材料与器件（林仕伟）第五讲 pn结IV特性.pptVIP

Limitation of the diode current model (cont.) Junction capacitance Cj 结电容 Junction capacitance Cj (cont.) It is useful to define an incremental capacitance, Cj , that relates the incremental charge stored to an incremental voltage change across the pn junction Charge on the either side of the SCR ?Q = q A ND xn = q A NA xp? Recall for a abrupt junction Junction capacitance Cj (cont.) Junction capacitance Cj (cont.) It can be shown that G is the dopant concentration gradient of the linearly graded pn junction. Cj has a form identical to that of a parallel plate capacitor, except that W is a function of the bias voltage V in the case of a pn junction capacitance. Cj has a form identical to that of a parallel plate capacitor, except that W is a function of the bias voltage V in the case of a pn junction capacitance. Physically, this is due to the fact that the only mobile charge at the edges of the depletion, NOT the space charge within the depletion region, responds to changes of Vapp. * In other words, they act as infinite sources or sinks for electrons and holes. Consequently, excess carrier concentrations are reduced to zero at such contacts, or equivalently, carrier concentrations are back to their equilibrium values. * Law of the injection relates the injected electron (minority carrier) concentration, np (x’ = 0) = np (0), into the p-bulk region to the equilibrium electron (minority carrier) concentration, npo , and the bias voltage, V. * By a similar analysis, the hole concentration injected into the n-bulk region, pn (x” = 0) = pn (0), is related to the equilibrium hole concentration, pno and the bias voltage given by the above equation. * Injected electrons (excess minority carrier) in the p-bulk region diffuse away from the SCR and eventually recombine with holes (majority carriers) in the region. Holes lost by recombination are replenished by the positive terminal of the voltage source connected to the ohmic metal/p-semiconductor conta