Transistor and Circuit Design for 100–200 GHz ICs英文文献.pdfVIP

IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 40, NO. 10, OCTOBER 2005 2061 Transistor and Circuit Design for 100–200-GHz ICs Zach Griffith, Member, IEEE, Yingda Dong, Dennis Scott, Yun Wei, Navin Parthasarathy, Mattias Dahlström, Christoph Kadow, Vamsi Paidi, Mark J. W. Rodwell, Fellow, IEEE, Miguel Urteaga, Richard Pierson, Petra Rowell, Bobby Brar, Sangmin Lee, Nguyen X. Nguyen, and Chahn Nguyen Abstract— Compared to SiGe, InP HBTs offer superior electron for a transistor at a given bandwidth. Compared to SiGe, InP transport properties but inferior scaling and parasitic reduction. heterojunction bipolar transistors (HBTs) have 3.5:1 higher Figures of merit for mixed-signal ICs are developed and HBT collector electron velocity and 10:1 higher base electron scaling laws introduced. Device and circuit results are summa- rized, including a simultaneous 450 GHz and 490 GHz max diffusivity. Consequently, at the same scaling generation InP DHBT, 172-GHz amplifiers with 8.3-dBm output power and HBTs would have 3:1 greater bandwidth than SiGe HBTs. 4.5-dB associated power gain, and 150-GHz static frequency di- Today the maturity of advanced silicon processes has enabled viders (a digital circuit figure-of-merit for a device technology). To SiGe HBTs to be fabricated with 100-nm emitter junctions compete with advanced 100-nm SiGe processes, InP HBTs must with minimal extrinsic parasitics, while efforts to similarly be similarly scaled and high process yields are imperative. De- scribed are several process modules in development: these include scale InP HBTs have just b