High resolution rutherford backscattering spectrometry study on process dependent elemental depth profile change of hafnium silicate on silicon英文文献.pdfVIP

High-resolution Rutherford backscattering spectrometry study on process dependent elemental depth profile change of hafnium silicate on silicon C. Ichiharaa Electronics Research Laboratory, Kobe Steel, Ltd., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan and Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan S. Yasuno Electronics Technology Department, Kobelco Research Institute, Inc., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan H. Takeuchib Advanced Technology Development Facility Inc., 2706 Montopolis Drive, Austin, TX 78741 A. Kobayashi Electronics Research Laboratory, Kobe Steel, Ltd., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan S. Mure Machinery and Engineering Company, Kobe Steel, Ltd., 2-3-1, Shinhama Arai-cho, Takasago, 676-8670, Japan K. Fujikawa Electronics Technology Department, Kobelco Research Institute, Inc., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-2271, Japan K. Sasakawa Electronics Technology Department, Kobelco Research Institute, Inc., 1-5-5, Takatsukadai, Nishi-ku, Kobe 651-25271, Japan and Department of Micro Engineering, Kyoto University, Kyoto 606-8501, Japan Received 31 October 2008; accepted 31 March 2009; published 30 June 2009 Process characterization of HfSiON/SiON films was performed by nondestructive elemental depth profile analysis using high-resolution Rutherford backscattering spectrometry. As-grown atomic layer deposition HfSiO film 2 nm was found not to be uniform but to have a gradient near the top surface with Si concentration higher than the bulk. Regardless of native oxide removal, HfSiO grown on HF-last Si results in an almost identical interfacial SiOx thickness