Molecularly Protected Bismuth Telluride Nanoparticles英文文献.pdfVIP

S N O I T A DOI: 10.1002/adma.200600495 C I N Molecularly Protected Bismuth Telluride Nanoparticles: U M Microemulsion Synthesis and Thermoelectric Transport M O Properties** C By Arup Purkayastha , Seongyul Kim, Darshan D. Gandhi, Pethuraja G. Ganesan, Theodorian Borca-Tasciuc, and Ganapathiraman Ramanath* The efficiency of thermoelectric devices is a function of the muth telluride), by introducing 3D confinement, that is, pro- non-dimensional figure of merit ZT[1] of the material, where ducing nanoparticles, is expected to yield higher ZT values. T is the absolute temperature and Z = ra2/j; a = thermoelec- This approach could also allow the tuning of quantum effects tric power or the Seebeck coefficient, r = electrical conductiv- by tailoring the nanoparticle size and shape, to facilitate addi- ity, j = thermal conductivity; the numerator of Z is referred to tional mechanisms for increasing ZT. Indeed, power-factor in- as the power factor. State-of-the-art thermoelectric materials creases have been predicted to arise from such effects in well- usable for cooling and power generation have a ZT ∼ 1, organized Si/Ge nanoparticle arrays.[11] Hence, synthesis and whereas a ZT ∼ 4 is necessary to surpass competing technolo- assembly of nanoparticles of bismuth telluride is of interest to gies.[2] Factorial enhancements in ZT may be obtained by enable the development of higher efficiency devices for ther- introducing nanoscopic geometrical confinement in one, two, moelectric cooling and power generation. or three dimensions, for example, nanolayered quantum-well Bismuth telluride nanoparticles with diameters of