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Al-oxynitride interfacial layer investigations for PrXOY on SiC and Si
This article has been downloaded from IOPscience. Please scroll down to see the full text article.
2008 J. Phys.: Conf. Ser. 94 012004
(/1742-6596/94/1/012004)
View the table of contents for this issue, or go to the journal homepage for more
Download details:
IP Address: 39
The article was downloaded on 17/01/2011 at 01:56
Please note that terms and conditions apply.
Interfacial Nanostructures in Ceramics: a Multiscale Approach IOP Publishing
Journal of Physics: Conference Series 94 (2008) 012004 doi:10.1088/1742-6596/94/1/012004
Al-Oxynitride interfacial layer investigations for Pr O on SiC
X Y
and Si
K Henkel, K Karavaev, M Torche, C Schwiertz, Y Burkov and D Schmeißer
Brandenburgische Technische Universität Cottbus, Angewandte Physik-Sensorik, K.-
Wachsmann-Allee 17, 03046 Cottbus, Germany
henkel @tu-cottbus.de
Abstract. We investigate the dielectric properties of Praseodymium based oxides Pr O by
X Y
preparing MIS (metal insulator semiconductor) structures consisting of Pr O as a high-k
X Y
insulating
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