多晶硅刻蚀.ppt

* SCELL 2004 - Badajoz Institute of Metallurgy and Materials Science Polish Academy of Sciences 25 Reymonta Str., 30-059 Cracow, Poland P.Panek, M.Lipiński, J.Dutkiewicz Texturization of Multicrystalline Silicon by Wet Chemical Etching for Silicon Solar Cells http:// www.imim-pan.krakow.pl e-mail: pan-kozy@wp.pl Texturization of Multicrystalline Silicon by Wet Chemical Etching for Silicon Solar Cells P.Panek, M.Lipiński, J.Dutkiewicz - SCELL 2004 Badajoz 2 INTRODUCTION Two kinds of surface texturization of mc-Si obtained by wet chemical etching are investigated in view of implementation in the solar cell processing: Acid texturization Macro-porous texturization 10HF:1HNO3:1H2O Texturization of Multicrystalline Silicon by Wet Chemical Etching for Silicon Solar Cells P.Panek, M.Lipiński, J.Dutkiewicz - SCELL 2004 Badajoz The texturization methods for ”as cut ”, 1 ?·cm, p-type, multicrystalline Si (mc-Si) KOH (saw damage remowing) 2HF:1HNO3:2H2O:2H2O2:1C2H5OH 2HF:98HNO3 3 Macroporous silicon formation First method Second method Acid texturization Texturization of Multicrystalline Silicon by Wet Chemical Etching for Silicon Solar Cells P.Panek, M.Lipiński, J.Dutkiewicz - SCELL 2004 Badajoz 6 15 s 30 s 60 s SEM photograph of mc-Si surface after 15 s, 30s and 60 s acid etching. First method: acid texturization 20 μm 20 μm 20 μm Texturization of Multicrystalline Silicon by Wet Chemical Etching for Silicon Solar Cells P.Panek, M.Lipiński, J.Dutkiewicz - SCELL 2004 Badajoz 4 Mezoporous Si layer formation process KOH + etching in C1 {2HF:1HNO:2H2O:2H2O2:1C2H5OH} solution Etching time in C2 = {2HF:98HNO3} solution 40 s 90 s 300 s Macroporous formation Chosen place Second method –macroporous formation Texturization of Multicrystalline Silicon by Wet Chemical Et