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高频电子线路实验指导书(英文版)
1st Lesson: Single-tuner resonant amplifier circuit
A. Experiment aim
Get familiar with the composing of Single-tuner resonant amplifier circuit and usage.
Test its performance parameters that take place the resonance.
Mastering the principle of high-frequency low signal tuner amplifier and the methods on designing high-frequency signal amplifiers.
B. Apparatus
Oscillograph one
Digital multimeter one
High-frequency experimentation case one
C. Experimental circuit principle
This experiment consult circuit diagram 1-1, using emitter to a total of Law. Load of collector of transistor is parallel resonance LC which can do the work of amplifying and frequency choosing at the same time. In the circuit, the standard point of the transistor depends on resistance of RB1, RB2 RE.
The characteristics of tuner amplifier is the load of amplifier being not pure resistance, but the parallel resonance circuit build up by L C. Because of the changing of impedance of LC, at the point of f0=, the impedance get the apogee as a resistance performance with the highest magnification. In this case, we can choose to amplify the very frequency signals. So, it is widely used as selected frequency amplifier in high and middle frequency environment.
Pic 1-1 Single-tuner resonant amplifier circuit
D. Process
1、Get the modular G2 connected and the small high-frequency signal tuner amplifier parts JA1. Connect the +12V power supplier.
2、Transform K1 to right to make the LED on.
3、Adjust the standard point of the transistor.
Test to read the voltage of ejector of QA1 with the INA1 connected to ground. Adjust WA1 to make =2.25V. And then, read and notate the standard point.
metrical Whether Q1 working as amplifier depend on Vce VBQ VEQ VCQ VCEQ Yes No Warrant: when Q1 is working as amplifier:VBEQ=VBQ-VEQ≈0.6V~0.7V,VCEQ equals to VCQ-VEQ
4、The frequency of circuit resonant f0
INA1 connects to signal of sine
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