碳纳米管晶体管报告.pptVIP

朱宗鹏 Contents 1. Introduction We have reported that single-wall CNT-FETs with poly-crystalline ferroelectric PbZrxTi1-xO3(PZT) thin films as gate insulators, where the hysteresis loop shows clockwise manner, while, for usual CNT-FET with SiO2 gate, the hysteresis loop shows anticlockwise manner. The expected clockwise transfer characteristics have also been reported on CNT-FETs with an organic ferroelectric gate insulator or with a well-controlled epitaxial BaTiO3 thin film. The use of inorganic polycrystalline ferroelectric material is crucial for the practical applications such as long life time and robust data storage. Additionally, polycrystalline PZT thin films are very cost-effective for the practical applications 1. Introduction In the case of polycrystalline PZT device, the transfer characteristics of PZT-CNT-FET depend on the polarization characteristics of PZT domains under the CNT, the adhesion between CNT and PZT, and the charge accumulation. The improvement of the transfer characteristics with top dielectric medium on gate capacitance for a SiO2 gate graphene FET has been reported, where an ionic liquid was used as the top dielectric medium. This improvement was realized due to the improvement of the capacitive coupling to the back gate voltage by the ionic liquid application like FETs with surrounding gate structures. In this study,we investigate the transfer characteristics of the PZT-CNT-FETs with the application of ionic liquid to the CNT channel in order to improve the transfer characteristics with high reproducibility. 2. Experimental The CNT channel was fully covered with the ionic liquid. It is noted that the electric double layer with a thickness of a few nm is formed on the charged surface by the ionic liquid and the capacitance formed by the electric double layer is 10 uF/cm2 Thus, the polarization charge induced on the PZT surface is fully coupled to the electrodes or CNT channel through the ionic liquid. 3. Results and Di