太阳能电池物理与技术 31p.ppt

* Cell and module construction Photovoltaic effect and basic solar cell parameters To obtain a potential difference that may be used as a source of electrical energy, an inhomogeneous structure with internal electric field is necessary. Suitable structures may be: PN junction heterojunction (contact of different materials). Vmp VOC open circuit voltage VOC, short circuit current ISC maximum output power VmpImp fill factor efficiency Parameters VOC, ISC, FF and η are usually given for standard conditions: spectrum AM?1.5 radiation power 1000 W/m2 cell temperature 25°C. Important solar cell electrical parameters Modelling I-V characteristics of a solar cell Series resistance RS Parallel resistance Rp PN junction I-V characteristics Aill – illuminated cell area A - total cell area Output cell voltage V = Vj- RsI To maximise current density JPV it is necessary maximise generation rate G minimise losses losses optical recombination electrical reflection shadowing not absorbed radiation emitter region base region surface series resistance parallel resistance Series resistance Rs consists of: ·R1 – contact metal-semiconductor on the back surface ·R2 – base semiconductor material ·R3 – lateral emitter resistance between two contact grid fingers · R4 – contact metal-semiconductor on the grid fingers ·R5 – resistance of the grid finger ·R6 – resistance of the collector bus Series resistance Rs influences strongly solar cells efficiency R3 – lateral emitter resistance between two contact grid fingers Decrease of ρN is connected with increasing ND ? Auger recombination rate increases Decrease of the finger distance d results in a decrease of illuminated area Aill It is very important to optimise xj Optimising PN junction depth The photo-current density JPV consists from carriers collected by the electric field in the space charge region of the PN junction, i.e. from carriers gene