中文版-一维纳米结构的合成.ppt

Although the exact growth mechanism for this process still needs more investigation，the authors suggested a number of factors that determined the wire growth kinetics. For example，the SixO (x1)layer at the tip of each nanowire seemed to have a catalytic effect．This layer might be in or near a molten state and thus capable of enhancing atomic absorption, diffusion, and deposition．The SiO2 component (from the decomposition of SiO)in the shell might help to retard the lateral growth of each nanowire． The precipitation, nucleation,and growth of Si nanowires always occurred in the region closest to the cold finger，which suggested that the temperature gradient provided an external driving force for the nanowire growth． 尽管精确的生长机理还有待研究,但笔者给出了一些决定线生长动力学的因素.如在每根纳米线顶端的SixO (x1)层有催化作用,这一层处于或接近熔融状态,从而有利于院子的吸收,扩散和沉积.(SiO分解形成的) SiO2 部分可能有利于阻碍纳米线侧面的长大.硅纳米线的析出,形核和长大总是发生在靠近冷端的区域,这说明了温度梯度提供了纳米线生长的外部驱动力. For example, methanolysis of {tert-Bu2In[μ-P(P(SiMe3)2)]} in an aromatic solvent could yield polycrystalline InP fibers 10-l00 nm thick and up to 1000 nm long at temperatures in the range of ll1-203℃。比如，在芳香烃溶液中的甲醇分解作用下的{tert-Bu2In[μ-P(P(SiMe3)2)]} 可以生长出10-100nm厚，1000nm长的多晶InP 纳米纤维，温度条件为111-203. The key component of this synthesis was a molecular component whose constituent groups could be eliminated to generate a non-molecular unit, from which the InP crystal lattices were assembled.这个合成方法的关键要素是有一个分子成分相的组成分子团能够消失而产生一个非分之结构单元，在这个结构单元上实现InP晶格点阵的组成。 Detailed studies indicated that the decomposition of this organometallic precursor proceeds through a sequence of isolated and fully characterized intermediates to yield complex [tert-Bu2In(μ-PH2)]3 ；this complex subsequently underwent alkane elimination to generate the building blocks-(InP)n fragments. In the following steps，the (InP)n fragments dissolved into a dispersion of droplets formed by molten indium, and recrystallized as InP fibers．详细的研究表明这种有机金属化合物前驱体的分解通过一系列的独立和完全表征的中间体进行来长出[tert-Bu2In(μ-PH2)]联合体；联合体随后通过烷烃的消失来产生“积木”-即InP碎片。在接下