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铜铟镓硒高效率薄膜电池技术:实验室现状 24p
High Efficiency CIGS Thin Film Solar Cells: Laboratory Perspective Introduction CIS thin-film PV is a success story Fine example of moving RD work to commercialization Concerted effort is still needed: Increase efficiency in all systems Simplify device structures Understand electronic effects at interfaces Simplify deposition processes to increase speed, reduce cost Outline High Efficiency CIGS Solar Cells Thin CIGS cells Low Temperature Deposition Deposition from Low Purity Sources Conclusions Standard Cell Structure High Efficiency Solar Cells Demonstrated high efficiency CIGS solar cells with high Voc and fill factors. Efficiency ≥ 19% for Eg of 1.15–1.2 eV. Presented new results on thin CIGS solar cells made by three-stage process and co-deposition. 17% efficiency at 1 μm, 9% at 0.4 μm. Processing at lower temperatures, low purity metals appear promising. F.S. Hasoon J. Dolan G. Teeter T. Moriarty X. Wu K. Ramanathan, R. Dhere, J. Keane, B. To, R. Bhattacharya, M. Contreras, and R. Noufi National Center for Photovoltaics, NREL 2005 SETP Review Meeting, Denver, CO ZnO CdS, 50 nm CIGS, 2.5 μm Mo, 0.8 μm Float Glass Towards Twenty CIGS Solar Cells with Eg=1.1-1.2 eV 26% Ga/(In+Ga) 31% Ga/(In+Ga) 19.2 79.48 34.33 0.704 1.12 19.3 79.65 34.60 0.701 1.10 Efficiency* (%) Fill Factor (%) Jsc (mA/cm2) Voc (V) Bandgap (eV) 18.2 78.08 31.66 0.737 1.21 18.4 78.47 31.72 0.740 1.22 18.7 80.33 31.84 0.731 1.17 19.0 80.27 32.86 0.720 1.15 * Uncertainty is 3% of absolute value Efficiency vs. CIGS Bandgap A decade of collaboration Na higher, Nt lower than other materials Cell Level Stability: Unchanged Transient Effects: Negligible Band gap grading: Ongoing Electronic processes at the junction: Cd PE, Zn doped junctions Thin CIGS Solar Cells Thin CIGS Solar Cells Indium availability and price are concerns for CIS PV. Began work to fabricate solar cells on thinner (≤1 μm) absorbers grown by modified 3-stage process. Thin absorbers also fabricated using co-deposition of all eleme
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