电子器件-1-1-半导体及器件发展史.ppt

Moore’s Law * Moore’s Law 集成电路芯片中 晶体管数量每两年提高2倍 特征尺寸每三年缩小21/2倍 芯片集成度每三年提高4倍 芯片性能每十八个月提高2倍 * Five Major Challenges in The Future Wafer Lithography Device Interconnect Economy * * Southeast University Nanjing ? China Key Laboratory of MEMS of Ministry of Education Southeast University Nanjing ? China Key Laboratory of MEMS of Ministry of Education Electronic Devices -History and Develop Presented by Lei Wang Outlines Main Content of This Course – Electronic Devices Calendar and Test Textbook and Reference Contacts Historical Overview of Microelectronics and Future Development * Main Content of This Course – Electronic Devices Chapter 6: Field Effect Transistor (FET) Junction FET (JFET) Metal-Semiconductor FET (MESFET) High Electron Mobility Transistor (HEMT) Metal Oxide Semiconductor FET (MOSFET) Chapter 7: Bipolar Junction Transistor (BJT) Bipolar Junction Transistor (BJT) Heterojunction Bipolar Transistor (HBT) Chapter 8: Optoelectronic Devices Solar Cells; Photodetectors; Light-Emitting Diodes (LED); Semiconductors Lasers Chapter 10: High-Frequency and High-Power Devices Tunnel Diode;Gunn Diode;Impact Avalanche Transit Time (IMPATT) * Calendar and Test Calendar: Course: 1st – 16th week 3 Times of Homework, Chapter 6, 7, 8 Test: 17th – 18th week Test: Textbook, calculator * Textbook References B. G. Streetman, Solid State Electronic Devices, 6th Edition, , 2007 S. M. Sze, Ed, Modern Semiconductor Device Physics, Wiley, New York, 1998. S. M. Sze, Physics of Semiconductor Devices, 2nd Ed., Wiley, New York, 1981. 刘恩科，半导体物理学，第六版，电子工业出版社，北京，2007 * Contacts Name: Lei Wang Address: Key Laboratory of MEMS of Ministry of Education Room 209, Nangao Building Sipailou Campus Tel: +86-25ext. 8812 E-mail: lei-wang@seu.edu.cn * HISTORICAL OVERVIEW OF MICROELECTRONICS * Historical Overview of Microelectronics Vacuum Tube FET Transistor Integrated Circuit CPU Historical Overview of Microelectronics and Future Development * Vacuum Tube - Diode Princ