贴片三极管封装.doc

贴片三极管封装 ?, tf IB1=-IB2=12mA 25 ns 　　A,Jun,2011 　　The bottom gasket The file folder 　　Label on the Reel 　　Plastic bag 1000×1 PCS 　　The top gasket 　　Seal the box Stamp “EMPTY” on the empty box Seal the box QA Label Label on the Inner Box Inner Box: 210 mm× 208 mm×２０３　mmOuter Box: 440 mm× 440 mm× 230 mm 2SC2881贴片三极管SOT-89封装三极管2SC2881参数　　【南京南山半导体有限公司 — 长电贴片三极管选型资料】 　　JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD 　　=　　　　 SOT-89-3L Plastic-Encapsulate Transistors 2SC2881 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltage 　　z Complementary to 2SA1201 ====== 　　APPLICATIONS 　　z Power Amplifier and Voltage Amplifier 　　MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 　　VCBO 　　VCEO 　　VEBO 　　IC 　　PC 　　RθJA 　　Tj 　　Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature 120 120 5 800 500 250 150 -55~+150 V V V mA mW ℃/W ℃ ℃ 　　ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) 　　Parameter 　　Collector-base breakdown voltage 　　Collector-emitter breakdown voltage 　　Emitter-base breakdown voltage 　　Collector cut-off current 　　Emitter cut-off current 　　DC current gain 　　Collector-emitter saturation voltage 　　Base-emitter voltage 　　Transition frequency 　　Collector output capacitance 　　SymbolV(BR)CBOV(BR)CEOV(BR)EBOICBO IEBO hFE VCE(sat) VBE fT Cob　　Test conditions IC=1mA,IE0 IC=10mA,IB0 IE=1mA,IC0 Min Typ Max Unit VCB=120V,IEVCE=5V, ICIC=500mA,IB=50mA 　　VCE=5V, ICVCE=5V,IC=100mA VCB=10V, IE=0, f=1MHz VEB=5V,IC 120 30 pF 　　CLASSIFICATION OF hFE 　　RANK 　　RANGE 　　MARKING 　　80––240 A,Nov,2010 　　The bottom gasket The file folder 　　Label on the Reel 　　Plastic bag 1000×1 PCS 　　The top gasket 　　Seal the box Stamp “EMPTY” on the empty box Seal the box QA Label Label on the Inner Box Inner Box: 210 mm× 208 mm×２０３　mmOuter Box: 440 mm× 440 mm× 230 mm A44贴片三极管SOT-89三极管封装A44参数　　【南京南山半导体