irs2109半桥驱动器.pdfVIP

Data Sheet No. PD60261 IRS2109/IRS21094(S)PbF Features HALF-BRIDGE DRIVER • Floating channel designed for bootstrap operation • Fully operational to +600 V Product Summary • Tolerant to negative transient voltage, dV/dt immune VOFFSET 600 V max. • Gate drive supply range from 10 V to 20 V • Undervoltage lockout for both channels IO+/- 120 mA / 250 mA • 3.3 V, 5 V, and 15 V input logic compatible • Cross-conduction prevention logic VOUT 10 V - 20 V • Matched propagation delay for both channels • High-side output in phase with IN input ton/off (typ.) 750 ns 200 ns • Logic and power ground +/- 5 V offset. Deadtime 540 ns • Internal 540 ns deadtime, and programmable up to 5 µs with one external RDT resistor (IRS21094) (programmable up to 5 µs for IRS21094) • Lower di/dt gate driver for better noise immunity • Shutdown input turns off both channels. Packages • RoHS compliant Description The IRS2109/IRS21094 are high voltage, high speed power MOSFET and IGBT drivers with de- pendent high- and low-side referenced output 8 Lead SOIC 14 Lead SOIC channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with stan- dard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-con- 14 Lead PDIP duction. The floating channel can be used to drive 8 Lead PDIP an N-channel power MOSFET or IGBT in the high- side configuration which operates up to 600 V.