第9章 现代CMOS工艺最基本的流程.ppt

* Trench Oxide Polysilicon Cross Section N- Well P- Well N+ Source/Drain P+ Source/Drain Spacer Contact 平面视图 完成接触孔，多晶硅上的接触孔没有出现在剖面图上 * Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 Ti (200?) - electromigration shunt TiN (500?) - diffusion barrier Al-Cu (5000?) - main conductor TiN (500?) - antireflective coating Metal1淀积 第一层金属淀积(Metal1) 实际上由多个不同的层组成 溅射工艺 * Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 Photoresist 光刻胶成形 光刻胶成形 用于定义Metal1互连 * Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 Photoresist Metal1刻蚀 Metal1刻蚀 基于氯的RIE 由于Metal1由多层金属组成，所以需要多个刻蚀步骤 * Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 除去光刻胶 * Trench Oxide Polysilicon Cross Section N- Well P- Well N+ Source/Drain P+ Source/Drain Spacer Contact Metal1 平面视图 完成第一层互连 * Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 IMD淀积 金属间绝缘体(IMD)淀积 未掺杂的SiO2 连续的CVD和刻蚀工艺，厚度约1um 填充在金属线之间，提供金属层之间的绝缘隔离 * Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 IMD抛光 IMD抛光 CMP * Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 Photoresist 光刻胶成形 光刻胶成形 用于定义通孔(Vias) * Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 Photoresist IMD1 通孔刻蚀 通孔刻蚀 基于氟的RIE，获得垂直的侧墙 提供金属层之间的连接 * Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 除去光刻胶 * Tungsten Silicon Substrate P+ Silicon Epi Layer P- P- Well N- Well N+ Drain N+ Source P+ Drain P+ Source BPS