Solid State Electronic Devices[固态电子器件](PPT-69).pptVIP

BJTs * Example BJTs * Example BJTs * Example BJTs * Example Explain the process of base narrowing. Assuming that the forward bias region has a negligible depletion region within the base, determine the voltage at which punch-through occurs in the following NPN device at 125 degC (a hot but still functioning transistor). Device cross-sectional Area = 10-4 /cm2 Width of base region = 10-3 cm ni2 = 2.1020 /cm3 BJTs * Example BJTs * Example BJTs * Quantitative Analysis of BJT If we make an assumption that the reverse bias junction is very reverse bias (as we have already assumed elsewhere) then we could say that the minority hole concentration close to the junction on the N side is pretty close to zero, ie Hence we can get the following simplifications. BJTs * Quantitative Analysis of BJT Now we can make an even further simplification by approximating tanh(y) with a first-order approximation of y BJTs * Quantitative Analysis of BJT So working on that basis, we get This accounts for hole recombination current but not the current injected back from the base to the emitter across the forward biased PN junction. However this can be kept small and neglected. BJTs * Quantitative Analysis of BJT We can see from this that the base current, which we want to be small as it reduces a and b, is inversely proportional to tp. So if we can increase tp we could decrease IB and corresponding increase b. tp is the time between a hole finding an electron, so if there are less free electrons then tp will go up. Thus reducing the doping in the N-type material increases tp and reduces IB. Making the N in the middle of the sandwich very lightly doped reduces recombination and improves the transistor performance. BJTs * Quantitative Analysis of BJT A term which we’ll be investigating further is WB, the effective width of the base, ignoring the depletion regions. Increasing the length increases IB as it clearly would increase the recombination rate. Norm