0.13um栅极多晶硅低压沉积工艺稳定性分析 word格式.docx

目录1 绪论11.1 集成电路发展的历史及趋势··················································································· 11.1.1 什么是集成电路····························································································11.1.2 半导体工艺的发展························································································21.1.3 CMOS集成电路发展的所面临的挑战2.炉管低压化学沉积工艺（LPCVD）的简介4LPCVD工艺4LPCVD多晶硅的炉管结构41.2.3 LPCVD多晶硅薄膜的性质和制备方法52 低压高温条件下的栅极多晶硅生长72.1 硅生长原理·············································································································· 82.2 LPCVD多晶硅生长速率142.2.1 多晶硅生长速率与温度·············································································· 142.2.2 多晶硅生长速率与压力·············································································· 153 多晶硅薄膜的研究173.1 LPCVD 多晶硅晶粒特点183.2 多晶硅电学性能···································································································194 LPCVD 多晶硅薄膜制备工艺的研究204.1 栅极多晶硅的常用改善·······················································································204.2 多晶硅制备中不稳定性根本原因分析································································214.2.1 LPCVD工艺腔体温度控制能力244.2.2 LPCVD工艺腔体压力控制能力264.2.3 LPCVD工艺腔体硅烷流量的控制能力285 多晶硅制备的不稳定性的解决方案325.1 表面粗糙度V.S.电阻325.2 干扰硅烷流量因素的分析···················································································345.3 栅极多晶硅工艺的改进·······················································································365.4 栅极多晶硅工艺改进的实验设计········································································385.5 综合解决方案的试验验证···················································································415.6 本章小结··············································································································· 43VII6 结论446.1 总结·······················································································································446.2 工作成果推广······································································