Chapter 4 Optical Receivers4章光接收机.pptVIP

OE of HUST Chapter 4 Optical Receivers Configuration Requirements high sensitivity fast response low noise low cost high reliability Chapter 4 Optical Receivers Basic Concept Common Photodetectors Receiver Design Receiver Noise Receiver Sensitivity Sensitivity Degradation 4.1 Basic Concepts 4.1.1 Detector Responsivity Stimulated absorption: photon an electron-hole pair Photon current: , R: responsivity Quantum efficiency: 4.1.2 Rise time and Bandwidth Chapter 4 Optical Receivers Basic Concept Common Photodetectors Receiver Design Receiver Noise Receiver Sensitivity Sensitivity Degradation 4.2 Common photodetectors 4.2.1 p-n photodiodes a reverse biased p-n junction 4.2.2 p-i-n photodiodes i-layer → high resistance → large electric field → the depletion region throughout it → drift component dominates over the diffusion component → Double-heterostructure design 4.2.3 Avalanche Photodiodes Basic concepts Impact ionization: an accelerating electron can acquire sufficient energy to generate a new electron-hole pair. a photon a single primary electron many secondary electrons holes i-layer: absorption p-layer: multiplication through impact ionization impact-ionization coefficients: ( : electrons; : holes ) depend on material and on the electric field. Multiplication factor the current flow within multiplication layer assuming that: , the electric field across the gain region is uniform ( are constants), only electrons cross the boundary to enter the n-region. Avalanche process: intrinsically noisy, gain factor fluctuates around an average value. Responsivity Bandwidth APD structures Reach-through APD SAM-APD (Separate Absorption Multiplication) SAGM-APD (Separate Absorption Grading M