最新硅行业专业术语.doc

Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.?受主 - 一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子?Alignment Precision - Displacement of patterns that occurs during the photolithography process.?套准精度 - 在光刻工艺中转移图形的精度。?Anisotropic - A process of etching that has very little or no undercutting?各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。?Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the res*不良词语*t of stains, fingerprints, water spots, etc.?沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。?Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.?椭圆方位角 - 测量入射面和主晶轴之间的角度。?Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)?背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）?Base Silicon Layer - The silicon wafer that is located underneath the ins*不良词语*ator layer, which supports the silicon film on top of the wafer.?底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。?Bipolar - Transistors that are able to use both holes and electrons as charge carriers.?双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。?Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an ins*不良词语*ating layer.?绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。?Bonding Interface - The area where the bonding of two wafers occurs.?绑定面 - 两个晶圆片结合的接触区。?Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.?埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。?Buried Oxide Layer (BOX) - The layer that ins*不良词语*ates between the two wafers.?氧化埋层(BOX) - 在两个晶圆片间的绝缘层。?Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.?载流子 - 晶圆片中用来传导电流的空穴或电子。?Chemical-Mechanica