基于纳米场效应结构的微加速度计的研究-测试计量技术及仪器专业论文.docxVIP

灵敏度可以达到 9.27mV/g。综上所述，本论文完成了 GaAs 基 DH-PHEMT 器件与悬臂梁-质量块微结构的设计、 加工以及输出特性的研究，通过实验验证了温度对器件输出的影响，并验证了应力与器 件输出的关系。对微结构的进一步研究还需要在惯性测试上多次尝试，并对 GaAs 基 DH-PHEMT 器件力敏特性与温度特性开展深入探索。关键词：双平面掺杂，高电子迁移率晶体管，纳米场效应，灵敏度The research of the micro accelerometer based on the nano field effect structureAbstractIn the paper, we carry out the study of the structrue of high sensitive sensors which based on a nano field effect of structure. Theory is mainly micro-nano mechanical structure deformation and the semiconductor devices carrier transport coupling mechanism research. Through the molecular dynamics method, we research the relationship between semiconductor devices cantilever beam and the internal stress reaction . In order to determine the PHEMT i-v characteristics among the general rules of the stress modulation ,we research the internal stress of the cantilever beam influence of AlGaAs/GaAs PHEMT carriers concentration and the heterojunction band structure . We have studied to determine the accelerometer pressure resistance coefficient is 1 E-7, it high than the general piezo-resistive materials two orders of magnitude. In addition, combined with micro processing technology and the body surface processing techniques, we through the research of semiconductor devices embedded microstructure processing technology, design, processing and testing the PHEMT embedded microcontroller acceleration sensor structure. We work out the nano field effect structure based on the high sensitive micro accelerometer. This paper, by using micro-cantilever beam structure, the macro forces will be introduced to the channel of the PHEMT. On this basis, we can make the coupling of the electric power sensor device, which can modulation of 2DEG’s concentration. Meanwhile ,we do the research work of AlGaAs/GaAs-PHEMT output characteristic of the device . What we get results are shown as follow:The molecular beam extension (MBE) technology preparation out DH-PHEMT film in the 3 inches of GaAs substrate. On