近空间升华法制备cdte薄膜及其在太阳电池中的应用-应用化学专业论文.docx

近空间升华法制备cdte薄膜及其在太阳电池中的应用-应用化学专业论文.docx

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近空间升华法制备cdte薄膜及其在太阳电池中的应用-应用化学专业论文

PreparationofCdTethinfilmsbyclose-spaced sublimationanditsapplicationinsolarcellsABSTRACTInthisthesis,CdTethinfilmswerepreparedbyclose-spacedsublimation,the propertiesandtheapplicationinquantumdotsensitizedsolarcells(QDSCs)were investigated.Theinfluenceofsourcetemperatureandsource-substratedistanceson thechemicalcomposition,surfacemorphology,crystalphaseandopticalbandgap ofCdTethinfilmswassystemicallyinvestigatedbyenergydispersivex-ray spectroscopy,scanningelectronmicroscope,x-raydiffractionandthe ultraviolet-visible-nearinfraredabsorptionspectra,respectively.Andthecatalytic redoxactivityofCdTethinfilmstopolysulfideselectrolytewasstudiedby electrochemicalwarkstation.Then,theCdS/CdSeco-sensitizedTiO2 photoanode andCdTethinfilmscounterelectrodewereassembledintoQDSCs,withthesystemofS22-/OH-/S2- astheelectrolyte,followingthephotovoltaicpropertiesofQDSCsweremeasured.Atthesource-substratedistanceof10mm,thedepositiontimeof40min,and sourcetemperatureof650℃and700℃,thecompositionofthepreparedCdTethinfilmwasinaccordancewiththestoichiometricratio,andwithapreferred orientationalong(111)plane,optical bandgapswerebothabout 1.43eV.Atthe sourcetemperatureof700℃,thesurface morphologywastight,uniformandnocrack,theintensityofthepeakswasstronger,thecrystallinitywasbetter,andthe grainsizewasobviouslylargerthanthatat650℃.Atthesourcetemperatureof 650℃, the deposition time of 40 min, the prepared CdTe thin films atsource-substratedistancesof5mm,10mmand15mmwereinaccordancewiththe stoichiometricratio,andwithapreferredorientationalong (111) plane, optical bandgapswerebothabout1.43eV,however,theintensityofthepeakswere5mm>10mm>15mm.Thisrevealedthatthe degreeof crystallinity wasweakenwiththeincreaseofthesource-substratedistance.Atthesource-substratedistanceof15 mm,thepreparedCdTethinfilmswasloose,withsmallparticlesandlargepores, contrarytothat of5 mm and 10 mm. CdTethin films were prepared at threetemperatureof700℃, 650℃, and600℃, respectively, withthe source-substratedistanceo

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