fecu掺杂gesi基稀磁半导体薄膜的结构及磁性研究word格式论文.docxVIP

为多晶 Si 晶格结构，同时有 Cu 间隙、Si 间隙和 Si 空位等缺陷形成，但是没有发现其他杂质相。常注入态样品中，Cu 以 Cu+离子形式存在，经 N2 气氛围快速 热退火后，有少部分 Cu2+离子出现。Hall 效应测量表明 Cu+离子注入使得 Si 母 体由 n 型传导变为 p 型。磁性测量显示样品具有室温铁磁性，该磁性来源于空穴 载流子传递的 Cu+离子与 Si 空位间的铁磁相互作用。关键词：磁性半导体 离子注入 磁畴 输运性质 霍尔效应Abstract Today, the information processing is developing fast. The transfer and storage of information are still base on the classical methods — controlling the charge and spinof electron, respectively. With the increase of information we need, the disadvantage of the classical semiconductors and ferromagnets working independently is coming forth. The diluted magnetic semiconductors (DMSs) based on both the charge and spin of electron have been one of the most interesting fields. Due to the incorporation of transition metal elements or rare earth elements, DMSs have many strange properties, compared to the classical semiconductors. DMSs have potential applications in the future.A lot of studies on Mn doped Ⅳ group DMSs have been reported on theories andexperiments. In spite of the delightful results, the discussions on the origin of the ferromagnetism and on the application are requiring further studies. In this paper, we have prepared Fe and Cu doped Si/Ge semiconductors. As following works:We have prepared Fe-doped Ge1-xFex films on Si substrates, with the substrate temperature of 473 K, and then the samples were annealed at 873 K for 20 min in vacuum. XRD measurements showed that all the samples had a Ge crystal structure, without any other secondary phases. The doped Fe atoms existed as Fe2+ mostly in the sample, with only a few Fe0. A majority of Ge atoms existed as Ge0, with some Ge-Oand Ge-Fe bonds. In the sample with Fe-doped concentration about 11.3%, Fe3+ ionsappeared. Magnetic measurements revealed that the samples were ferromagnetic at low temperature, and the Curie temperature was about 300 K. The ferromagnetism arises from the interaction between the random magnetic Fe atoms.The Si(Fe,N) films were prepared by Fe ions implantatio