第十四讲 当代自然科学进展——The GMR Effect 自然辩证法课件方案策划.pptVIP

第十四讲 当代自然科学进展——The GMR Effect 自然辩证法课件方案策划.ppt

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第十四讲 当代自然科学进展——The GMR Effect 自然辩证法课件方案策划.ppt

The GMR Effect Zhang Bo-yang Reporter Information Name: Zhang Bo-yang Office:North China Institute of Aerospace Engineering, Hebei,Langfang Direction of my research: Computational Physics E-mail: beyond_boyang@163.com QQContents 1.Introduction 2.MR effect 3.GMR effect 4.Applications 1.Introduction Faster, better, smaller, cheaper. This is the battle cry of computer advancement. 1.Introduction We know that a hard disk’s capacity had a sharp rise in recent years. 40G-80G-120G-160G and even bigger. But basically the volume of a hard disk had no change. So the recording density and the resolution of magnetic head had a sharp rise. All of these depend on the research on GMR effect, especially the second. 3.GMR effect GMR: giant magnetoresistance GMR effect :material’s resistance have a large change when outer magnetic field alters. The extent of the change is tenfold higher than original material. 3.GMR effect When magnetic fields are applied to magnetic materials, electrical resistivity is reduced. The MR and GMR read heads sense the change in electrical resistance in the magnetic disk created by the magnetic fields in which data is written to the disk. The sensors output voltage is the product of this resistance change. The signal is then amplified and sent to the hard disk drives data detection electronics. 3.GMR effect The GMR head is more sensitive than the regular MR head in that the GMR head detects electronic resistance in two ways rather than one. The GMR head uses the quantum nature of electrons which has two electron spin directions. 3.GMR effect The electrons which spin in a direction is same to the material’s magnetic orientation produce low resistance. 3.GMR effect While the electrons which spin in a direction is in reverse to the materials magnetic orientation produce a higher resistance. 3.GMR effect The quantum nature of electrons, therefore, creates a greater sensitivity to changes in electronic resistance. This, in turn, allows mor

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