材料物理教材chapter 12 electrical properties.ppt

* ◎ Forward bias: Large numbers of charge carriers flow across the semiconductor as evidenced by an appreciable current and a low resistivity. Electron + hole ◎ Reverse bias: The junction region is relatively free of mobile charge carriers, the junction is highly insulative. At high reverse bias voltages, order of several hundred volts, large numbers of charge carriers (electrons and holes) are generated. A very abrupt increase in current: breakdown. energy (12.18) * * THE TRANSISTOR ◎ Two primary types of function: First, the triode(三极管): amplify an electrical signal; Second, serve as switching devices in computers for the processing and storage of information. Two major types:junction (or bimodal) transistor and metal-oxide-semiconductor field-effect transistor MOSFET) JUNCTION TRANSISTORS ◎ A very thin n-type base region is sandwiched in between p-type emitter and collector regions. The circuit that includes the emitter–base junction (junction 1) is forward biased, whereas a reverse bias voltage is appliedacross the base–collector junction (junction 2). * ◎ A small increase in input voltage within the emitter-base circuit produces a large increase in current across junction 2. Thus, a voltage signal that passes through a junction transistor experiences amplification. ◎ Similar reasoning, n-p-n transistor: electrons instead of holes are injected across the base and into the collector * The MOSFET ◎ One variety of MOSFET: two small islands of p-type semiconductor that are created within a substrate of n-type silicon. Appropriate metal connections (source and drain) are made to these islands; an insulating layer of silicon dioxide is formed by the surface oxidation of the silicon. A final connector (gate) is then fashioned onto the surface of this insulating layer. A positive field on the gate will drive charge carriers (in this case holes) out of the channel, thereby reducing the electrical conductivity. Thus, a small alteration in the field (negative)