inasgasb超晶格光伏型红外探测器研究-study on inas gasb superlattice photovoltaic infrared detector.docx

AbstractInAs/Ga(In)Sb type-II superlattices has a special energy band structure whose energy gap is between that of InAs and GaSb. And we can adjust the energy gap according to the amount of In and the ratio of InAs and GaSb. From this point, we can design the cutoff wavelength and make it have a range of 2~50μm. And InAs/Ga(In)Sb type-II superlattices has many other advantages as small effective electron mass, long lifetime for carriers and a big absorb constant compared to other infrared detective material. So InAs/Ga(In)Sb type-II superlattices has a promising future in the infrared detective field.This article investigates the theory and performance of InAs/GaSb superlattice infrared detector. The 8 bands k·p theory in envelope function approximation was introduced to calculate the energy band of this material and we give out the dependence of it to periods, the width of one period and the ratio of width. When the period is between 20 to 30, the cutoff wavelength increase as the adding to period. But we can’t see the same performance when the period is 30 to 70. The increase of the InAs and width per period also make the cutoff wavelength longer.In order to test the performance of this material, I fabricated two PIN infrared detectors according to the standard processing for fabrication of semiconductor. I have investigated two wet chemical etching system, tartaric acid and tartaric acid plus hydrochloric acid. In the liquid of tartaric acid system, HF act as a catalyst and the best option is 0.4mL/400mL liquid. And the concentration of H2O2 can give a positive effect to the etching speed. But the H2O2 also can destroy the shape of mask for it can oxidize photoresist. As the tartaric acid plus hydrochloric acid system, I give the etching speed for InAs(56nm/Min), GaSb(340nm/Min) and InAs/GaSb superlattices (96nm/Min and 74nm/Min according to the width of InAs) under RT.After finish the fabrication, I-V test was introduced and we find that -J0=-2.3nA when V-0.5V.