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MSN0310W
30V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V =30V,I =10A
DS D
RDS(ON) 12mΩ @ VGS=10V
RDS(ON) 16mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson Lead Free
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
PIN Configuration Marking and pin assignment
SOP-8 top view Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
MSN0310W MSN0310W SOP-8 Ø330mm 12mm 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage
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