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MSN1002
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● V = 100V,I = 2A
DS D
RDS(ON) 240m @ VGS=10V (Typ:200m)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Lead Free
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin Assignment
PIN Configuration
D
G
S
Schematic diagram
SOT-23 top view
Package Marking And Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
MSN1002 SOT-23 Ø180mm 8 mm 3000 units
Absolute Maximum Ratings (T =25℃℃unless otherwise noted)
A ℃℃
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage
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