二维碲化镓半导体的制备及光 电性能研究-preparation and optoelectronic properties of 2d gallium telluride semiconductor.docxVIP

AbstractTwo-dimensional semiconductor materials with unique electrical, optical, magnetic and mechanical properties, so in the past few years have caused widespread concern in the relevant researchers. In addition to the graphene, 2-D function of semiconductor materials is currently the most representative is molybdenum d isulfide and boron nitride, two-dimensional gallium family of materials in recent years has caused wide attention of many researchers. III - VI layered compounds, such as gallium selenide, sulfide, gallium, indium selenide and two-dimensional semiconductor materials in photovoltaic devices, optoelectronic devices, nonlinear optics and microelectronics and other fields have a very good application prospect. This article is in this context to the semiconductor gallium telluride two-dimensional functional materials optical, electrical properties, in-depth research and analysis the gallium telluride application value in the field of electronic and optoelectronic devices.Research results show that single crystal gallium telluride has a monoclinic structure with space group C2 / m. But, a particle transition from the monoclinic to the hexagonal modification of gallium telluride was observed. The mobility of multiple- layer gallium telluride is 5-8 cm2/V.s, but the few-layer is 0.2-1.2 cm2/V.s. The on-off ratio of multiple- layer gallium telluride is about 10, and few-layer is about102 in room-temperature. The mobility increases with the temperature, but the on-offration decreases with the temperature increasing. The charge injection mechanism is dominated by thermal emission at high temperature, in addition, at low temperature the current- voltage characteristic show a transition from direct tunneling to F-N tunneling.Silica/silicon as substrate of telluride gallium light detector the light response under UV irradiation and quantum efficiency under the condition of the bias is 2 V 195 A/W - 1 and 105%, and the signal-to-noise ratio of up to 1012, the