钒酸钡基低介ltcc微波介质复相陶瓷的制备与性能分析-preparation and performance analysis of barium vanadate - based low-dielectric ltcc microwave dielectric multiphase ceramics.docxVIP
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钒酸钡基低介ltcc微波介质复相陶瓷的制备与性能分析-preparation and performance analysis of barium vanadate - based low-dielectric ltcc microwave dielectric multiphase ceramics
Farbarction and Properties of Ba3(VO4)2-Based Low-Permittivity and Low-temperature fired Microwave Dielectric CompositeABSTRACTAs the key materials of microwave substrate, dielectric antenna and other microwave components, the low-permittivity LTCC microwave dielectric ceramics have been widely utilized in microwave communication systems. In this dissertation, the near-zero τf value materials were synthesized through combining the positive τf value material (Ba3(VO4)2) and negative τf value materials (Zn2-xSiO4-x and LiMg0.9Zn0.1PO4), to compose the Ba3(VO4)2-Zn2-xSiO4-x and Ba3(VO4)2-LiMg0.9Zn0.1PO4 composite ceramics with low-temperature cofireability. The relationships between the processing methods, phase compositions, microstructure and the microwave dielectric properties of the composite have been investigated by XRD, SEM, EDS, Raman Spectrum and network analyzer, etc. The main contents are listed as following:First of all, the XRD results indicated that the Zn1.87SiO3.87 powder without ZnO secondary phase was prepared by controlling the ZnO deficiency with the Zn/Si ratio of 1.87:1. The SEM studies demonstrated the coexistence of Ba3(VO4)2 and Zn1.87SiO3.87 phases in the (1-y)Ba3(VO4)2-yZn1.87SiO3.87 composite sintered bodies, as further confirmed by XRD and Raman results. A slight amount of silicon-rich secondary phases may increase the dielectric loss of the composite, as a result, the composite with 40% Zn1.87SiO3.87 sintered at 1100 oC exhibited desirablemicrowave dielectric properties of εr~9.3,Q×f~24000 GHz, and τf~-0.4 ppm/oC.Secondly, adding the B2O3 into the 0.5Ba3(VO4)2-0.5Zn1.87SiO3.87 composite ceramic can not only induce the formation of B2O3-SiO2 liquid phase where the B2O3 reacted with the armorphous SiO2 in the composite, but also may reduce the amount of the silicon-rich secondary phase. As a result, the sintering temperature and dielectric loss of the composite were significantly decreased. The 3 wt% B 2O3doped 0.5Ba3(VO4)2-0.5Zn1.87SiO
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