基于icp工艺的垂直微小硅镜的加工.docVIP

基于ICP工艺的垂直微小硅镜的加工 第3卷第1期 2005年3月 纳米技术与精密工程 NanotechnologyandPrecisionEngineering Vo1.3 Mar. No.1 2005 FabricationofMicroVerticalMirrors onSiliconUsingInductivelyCoupled Plasma(ICP)Etching SHANXue—chuanh,MAEDAR,IKEHARAT (1.SingaporeInstituteofManufacturingTechnology,71NanyangDrive,638075,Singapore; 2.NationalInstituteofAdvancedIndustrialScienceandTechnology(AIST),Tsukuba305—8564,Japan) Abstract:Insilicondeepreactiveionetching(DRIE)usinginductivelycoupledplasma(ICP)etcher,anarrowtrench withawidthofseveralmicrometersusuallyshowspositivelytaperedprofile,whichmeansthatthewidthoftheetchedtrench decreaseswiththeprogressofetchingdepth.However,forawidetrench,thewidthofetchedprofilewillincreasewiththe increaseofitsdepthsincethedeformationofboundarylayerinplasma.Verticalityofsidewallsofetchedprofilesonsilicon willbeacriticalprobleminmanyapplications.Inthispaper,thefabricationofisolatedverticalmirrorsisreported.With theintroductionofmulti—stepsrecipesandoptimizationofsourcepower,substratebiaspowerandprocesspressure,thede— formationintheplasmaboundarylayerwasminimizedandtheetchedprofileswereimproved.Astheresults,microvertical mirrorsof120I.zmhighwithaperpendicularityof89.7.andmirrorsof200txmhighwith89.3.wererealized. Keywords:ICP;DRIE;micromirror;sidewall;profile;sourcepower;biaspower ArticleID:1672—6030(2005)01—0022—07 基于ICP工艺的垂直微小硅镜的加工 单学传,前田龙太郎,池原毅 (1.新加坡精密加工技术研究所,南洋路71号,638075,新加坡; 2.日本产业技术综合研究所,筑波305—8564,日本) 摘要:利用自感应耦合等离子(ICP)蚀刻机进行硅深层反应离子刻蚀,得到了几微米宽的狭槽,其轮廓通常为正 锥形,即蚀刻槽的宽度随着蚀刻深度的增大而减小.然而,对一个宽槽来说,由于等离子区内边界层的变形,其蚀刻 宽度会随着蚀刻深度的增加而增加.在许多应用中,硅蚀刻轮廓侧面的垂直状况是一个关键性问题.叙述了分离式 垂直镜的加工过程;研究了影响蚀刻轮廓的各种重要参数.经过引入多步制法与优化激励源,基底偏压源及加工压 力,减小了等离子区边界层内的变形,改善了轮廓的蚀刻状况.得到的结果为:120tzm高垂直微镜垂直度为89.7.. 200m高垂直微镜垂直度为89.3.. 关键词:ICP;DRIE;微镜;垂直侧面;工艺参数 Deepreactiveionetching(DRIE)usinginductively coupledplasma(ICP)etcheriswidelyusedforfabrica— tinghighaspectratiosiliconmicrostructures[1--3]. There aresomereportsonprocessstudiestoetchuniformly--dis?- tributednarrowtrenches?]usingICPetcher . Foranar— rowtrenchwithaw