scr结构参数对esd防护性能的影响分析-analysis of the influence of scr structural parameters on esd protection performance.docxVIP

摘要随着微电子技术的迅猛发展，半导体器件的特征尺寸日益减小，静电放电 (ESD,Electro-Static Discharge) 现象逐渐成为影响器件可靠性的重要因素之一。基 于二极管和 MOS 管等防护器件的发展，SCR(Silicon Controlled Rectifier)逐渐成为 ESD 防护领域的重要器件之一。本文理论研究与仿真技术相结合，分析了在不同SCR和LVTSCR(Low-Voltage Triggered SCR)内部结构参数情况下，两种器件对 ESD防护性能的影响。本文的主 要工作在以下几方面：首先，研究了ESD的原理，讨论了ESD引发的器件失效机理和损伤模式；其次，研究了半导体器件二维仿真的理论参数，包括器件参数和模型建立所需的基本方程和边界条件；最后，利用仿真软件 ISE-TCAD对SCR、LVTSCR和VASCR(Voltage Adjustable SCR)在ESD脉冲作用下的防护特性进行了 二 维 模 拟 ， 在 详 细 分 析 SCR 和 LVTSCR 工 作 原 理 的 基 础 上 ， 通 过 调 整 SCR 和LVTSCR内部几个重要的器件结构参数，研究了其 I-V特性曲线的漂移情况，深入分析器件结构参数的改变引起SCR和LVTSCR开启电压Vt和维持电压Vh改变的机 理，并同时验证了VASCR在开启电压Vt不变的情况下，对维持电压Vh的调节功能。关键词：可控硅低开启电压可控硅开启电压维持电压AbstractWith the rapid development of microelectronics technology, the feature size of the semiconductor device is increasingly reduced, which makes ESD (Electro-Static Discharge) become one of the important factors of impacting device reliability. Based on the development of protective devices such as diodes and MOS, SCR (Silicon Controlled Rectifier) has gradually become one of important devices in ESD protection.In this article, we use the theoretical research method and simulation technology to analyze the variation of SCR and LVTSCR (Low-Voltage Triggered SCR) in ESD protection by adjusting their internal parameters. The main work we have done consists of the following aspects: firstly, through the research on theory of ESD, its failure mechanisms and injury patterns are summarized. Secondly, we researched the two-dimensional simulation theory of semiconductor devices, including device parameters, the basic equations and boundary conditions which establish the model. Finally, the device simulation software ISE-TCAD is used to perform the two-dimensional simulation of SCR, LVTSCR and VASCR (Voltage Adjustable SCR) protection under ESD pulse. On the basis of detailed analysis of SCR and LVTSCR work principle, we further analyze the mechanism of variation of SCR and LVTSCR triggering voltage and holding voltage by adjusting their internal parame