sic晶体电光特性及飞秒激光改性分析-electro-optic characteristics of sic crystal and femtosecond laser modification analysis.docxVIP
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sic晶体电光特性及飞秒激光改性分析-electro-optic characteristics of sic crystal and femtosecond laser modification analysis
AbstractSilicon carbide ( SiC ) crystal, with unique characteristics of wide band gap ( namely, high transparency from visible to near infrared region), high Youngs modulus, high hardness, and high optical damage threshold, is not only a promising candidate as semiconductor electronic material, but also applicable as high-performance optical material. Based on the excellent electrical effects and optical effects of SiC crystal, we have explored the feasibility of 6H-SiC electro-optic modulator, and further researched electro-optical properties of 6H-SiC, which shows SiC crystal can be used to frabicate high temperature electro-optic modulator.In this thesis, electro-optical delays of 6H-SiC crystal are analyzed on the basis of refractive index ellipsoid theory. During series of experiments, He-Ne laser ( 632.8nm ) is employed to study the dependence of refractive index on the directions of light propagation and applied electric field, and then corresponding half-wave voltages and Pockels electro-optic coefficients are calculated. Therefore, the database for electro-optical parameters of 6H-SiC are further enriched, which paues the way for further investigation in this field.We have studied the interaction mechanism of femtosecond laser and 6H-SiC, and analyzed the photoconductivity changes of SiC after its surface modification. It is found experimentally surface modification of 6H-SiC by femtosecond laser will greatlly enhance the photoconduction at illumination of 365nm arc lamp(namely, the photocurrent is amplified of about ten times at the same appied dc voltage). Using femtosecond laser micromachining technology, high-quality gratings are form on the surface and interior of 6H-SiC crystal. Before and after annealing of 6H-SiC crystal at 1300 °C, there are not significant differences on grating parameters. In other words, grating formed in 6H-SiC is suitable for high temperature environment. It can be widely applied for optical processing, optical diffraction an
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