议程表-国立交通大学光电系.DOCVIP

國立交通大學學術研討會 Modeling and Simulation of Optoelectronic Devices 時間 : 101年11月22日 (星期四) 13:00 – 17:00 地點 : 國立交通大學光復校區 新竹市大學路1001號 交映樓一樓 國際會議廳 議 程 表 時間 講題 講 13:00 - 13:30 報 到 13:30 - 13:40 Opening 交通大學光電系 郭浩中教授 13:40 - 14:30 Recent progress on optoelectronic device simulation 加拿大商科光電腦 李湛明博士Crosslight Software Inc., President, Dr. Simon Li 14:30 - 15:00 TBD 晶元 顏勝宏 15:00 - 15:30 Innovative showerhead design of MOCVD systems 工研院電光所 趙主立 15:30 - 15:50 休 息 15:50 - 16:20 Development of 3D multi-scale TCAD simulation tool 台灣大學電機系 吳育任教授 16:20 - 16:50 Numerical study of quantum dot embedded solar cells 交通大學光電系 林建中教授 16:50 - 17:00 主辦單位：交通大學光電工程學系 協辦單位：加拿大商科光電腦有限公司Crosslight Software Inc. Recent progress on optoelectronic device simulation Recent progress on simulation technology for optoelectronic devices at Crosslight Software will be reviewed. For LED, advanced quantum tunneling model for multiple barrier structures will be discussed with some interesting results. Recent use of CSuprem on novel structures such as non-cylindrical VCSEL and multimode interference lasers, and hexagonal nanowire, will be introduced. For solar cells, treatment of quantum dots in Crosslight Software will be presented. 顏勝宏博士 晶元光電公司 (Topic TBD) 趙主立博士 工研院電光所 (Rong Xuan, Chu-Li Chao, Chih-Yung Huang) Innovative showerhead design of MOCVD systems This work proposes a novel showerhead of metal-organic chemical vapor deposition (MOCVD). The conditions of growth of GaN thin film were determined numerically and experimentally. A two-dimensional symmetric mode was used to simulate the reactor temperature and gas flow in the MOCVD system. The effects of flow rates and mass fractions of various species were analyzed and discussed. The conventional is compared with the novel showerhead for GaN growth. The results of modeling and experimental results are presented. 吳育任教授台灣大學電機系 Development of 3D multi-cale TCAD simulation tool As the development of nano-scale device technology, the planar s