射频功率ldmos器件的研究-微电子学与固体电子学专业论文.docxVIP

AbstractIn order to researching and developing devices of needing in the field of radar， correspond，guided navigation and so on，especially solid-state power amplifier devices. So，researching and developing RF power LDMOS devices is very important. The key of designing these devices is low parasitic capacitance，good linear and high RF gain. In this thesis，how to improve RF property of RF power LDMOS devices is investigated.The RF property of LDMOS is mostly affected by input parasitic capacitance and output parasitic capacitance，the effect of parasitism reduces the parameters of device such as efficiency，gain and cut-off frequency，and makes the match of input and outputdifficult. According as Sichuan province air traffic control radar solid-state components development project request，a general RF power LDMOS structure is designed in paper firstly，its electronic property is simulated，device structure is optimized using MEDICI. In order to improving RF property of RF power LDMOS，device structure is improved， the design of two structures is completed：one is RF power LDMOS with trench drift region structure；the other is a buried n layer partial SOI of RF power LDMOS.RF power LDMOS with trench drift region structure is optimized and designed in paper. Based on the frequency characteristic of RF power LDMOS，rectangle trench structure，converse triangle trench structure and triangle trench structure are proposed， the position，depth and width are analyzed. Under the condition of same breakdown voltage and on-resistance，the optimized trench structure is triangle structure，which can decrease the feedback capacitance largely，the feedback capacitance decreases by 24%，the cut-off frequency increases by 15%.A novel buried n layer partial SOI of RF power LDMOS is proposed. The output characteristics of the RF power LDMOS are greatly affected by the parasitic capacitance. The depletion width under the buried oxide layer of the proposed structureincreased，so the output capacitance de