创新玻璃辅助二氧化碳雷射对矽加工技术.pptVIP

1 20 Si Industry and Products Application in our Life Traditional Silicon Cutting and Marking Our Novel Approach for Si Micromachining Heart Sharp Cutting Cutting of Si Wafer Si Marking by CO2 Laser 創意歷程 創意歷程 : ?作者創意源起於CO2雷射對矽晶圓與玻璃的接合技術。 ? 優缺點 : 優點: ?快速、便宜、低成本、低能量功率、不需光罩輔助，就可完成矽晶圓切割、加工與刻印等目的。沒有傳統鑽石輪刀刀具磨損和晶片易破裂問題，也不需昂貴的短波長Nd:YAG或UV-laser等設備。 缺點: ?接合的密緊度與加工的品質有很大的關係。 ?切割與鑽孔的解析度在100um左右，若要更小必須更換雷射鏡組。 Laser Related Patent List * – MiNa Material and Machining Lab – 創新的玻璃輔助二氧化碳雷射對矽的加工技術 指導教授：鍾震桂 副教授 報告人:蕭恩柔 作者：林士隆、蕭恩柔、吳孟諭 國立成功大學機械學系暨研究所 研究生 Graduate Student, Dep’t of Mechanical Engineering, NCKU Tel: 06-2757575 ext. 62159-10, E-mail:ckchung@mail.ncku.edu.tw Silicon have been widely used in the application of IC Chip , solar energy opto-electronics, etc… IC Chip Si Industry and Products Solar Cell Silicon Wafer Application: wafer code name, batch number, the type of the products, trademark, made date. 3C Products Wear Disadvantage: 1.Fracture edge at random 2.Powder and chip 3.Apt to injure hands 4.Not easy to control Commercial Silicon Cutting by Diamond Wheel Disadvantage: 1.Fracture edge at random 2.Powder and chip 3.Unable to cut special form 4.Diamond wheel wear 5.Need using water and tape Nd:YAG Laser Excimer Laser Femtosecond Laser Disadvantage: 1.Expensive 2.Need mask Cutting of thin silicon wafer Commercial Silicon Cutting by Short Wavelength Laser 　No CO2 laser for Si etching/drilling /cutting 專利名稱 :避免產生潑濺碎片之晶圓標號製作方法 專利公告號 : 359885 專利公告日期: 2005.5.27 申請人名稱 : 台灣積體電路製造股份有限公司 Patent Method of Si Wafer Marking Laser Drilling Laser Etching Patent pending 10 passes 40 passes Experimental data Power: 30 W Speed: 5.715 (mm/sec) Pass: 20 In ambient air “Heart”type cutting Experimental data Power: 30 W Speed: 5.715 (mm/sec) Pass: 20 In ambient air 4” Silicon wafer cutting Patent pending Experiment data Power: 21 W Speed: 5 (mm/sec) Pass: 1 In amb