硅基薄膜太阳能电池 工艺技术的改进和现场维护 激光环节的工艺流程及其条件.docVIP

HYPERLINK /science?_ob=ArticleURL_udi=B6V4H-4YC39XX-1_user=8793841_coverDate=09%2F30%2F2010_alid=1495675228_rdoc=1_fmt=high_orig=search_origin=search_zone=rslt_list_item_cdi=5759_st=5_docanchor=_ct=80_acct=C000050221_version=1_urlVersion=0_userid=8793841md5=46a1d1baaf51312d72d819526dd748d7searchtype=a Optimization of microcrystalline silicon thin film solar cell isolation processing parameters using ultraviolet laser??Optics Laser TechnologyThis study used ultraviolet laser to perform the microcrystalline silicon thin film solar cell isolation scribing process, and applied the Taguchi method and an L18 orthogonal array to plan the experiment. The isolation scribing materials included ZnO:Al, AZO transparent conductive film with a thickness of 200?nm, microcrystalline silicon thin film at 38% crystallinity and of thickness of 500?nm, and the aluminum back contact layer with a thickness of 300?nm. The main objective was to ensure the success of isolation scribing. After laser scribing isolation, using the minimum scribing line width, the flattest trough bottom, and the minimum processing edge surface bumps as the quality characteristics, this study performed main effect analysis and applied the ANOVA (analysis of variance) theory of the Taguchi method to identify the single quality optimal parameter. It then employed the hierarchical structure of the AHP (analytic hierarchy process) theory to establish the positive contrast matrix. After consistency verification, global weight calculation, and priority sequencing, the optimal multi-attribute parameters were obtained. Finally, the experimental results were verified by a Taguchi confirmation experiment and confidence interval calculation. The minimum scribing line width of AZO (200?nm) was 45.6?μm, the minimum scribing line width of the microcrystalline silicon (at 38% crystallinity) was 50.63?μm and the minimum line width of the aluminum thin film (300?nm) was 30.96?μm. The confirmation experiment results were within