[整顿版]0.18um process introduction[精华].ppt

0.18um Process Flow Introduction Reference STI comparison FAB1 STI Picture In theory, Pre CMP thickness is 5800+200A , but in fact HDP thin film thickness is ~6100A. Because backside SiN thickness is 1625A, so 2450/1625=1.51 OE is ~50%. But for face SIN OE is ~2450/1050=2.33 133%. Correct: SiN thickness is 1050A not 1050-110=940A. Vt IMP dosage is Indium which is heavier than Boron, because VT stability issue, we need stable dosage during anneal period or other thermal treatment. Why not do RTA after every LDD IMP? Why does Teos OX use as spacer? Why not remove oxide before TEOS dep? Because