LTPSTFT教育完整.ppt

To increase mobility 　　two method 1. increase grain size SPC solid phase crystallization has advantage 2. quality of grain boundary ELA has advantage * Solid Phase Crystallization (SPC) Excimer Laser Annealing (ELA) 600 C Anneal LPCVD a-Si Major Crystallization Methods 17), 18) 450 - 550 C PECVD a-Si:H Dehydrogenation 400 C a-Si Starting Material Grain Size: several μm Grain Size: several hundreds nm poly-Si Grain growth Nucleation Several hours Laser Exposure Several μsec Fig. 44 * polySI膜比較 固相成長膜 ELA膜 １μｍ ０．１μｍ Electric property of poly-Si LTPS-TFT関連 -2016 4.12- * ? 2014 天马微电子股份有限公司. All rights reserved 目录 Directory LTPS　TFT　　 Short chanel effect etc. ＴＦＴ　structure and performance Poly-Si　specific　characteristics 1 4 2 3 TFT特性 (前回おさらい复习） g s Drain Gate souce drain -10 0 10 20 30 Gate电圧 (V) 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 Drain current (A) Id-Vg 特性 idealistc TFT Fig. 5 Vg=0V Vg=-10V N+ Vg=+ 10V P+ On Off Off Anlormalus　leakage Usually use of LDD structure to Reduce　leakage NMOS and PMOS gate souce souce gate Drain Off Off On electron hole ＣＭＯＳ ＮＭＯＳ ＰＭＯＳ Both　NMOS and PMOS NMOS　only PMOS　only Process　step 2PRstep　decrease CHD and PD Need　LDD 2-3PR step　decrease Possibility　to　reduce　LDD Circuit　configlation Easy：inventor　circuit Difficult；need　boot　strap Difficult；need　boot　strap TFT High　performance High　performance Low　performance IC conventinal compatible Need　special Voltage Vgh-Vgl MORE　than　Vgh-Vgl MORE　than　Vgh-Vgl process Low　temp　available; TP improve application High　performance Cegration Good　for　OLED application、top　emission Comparicon　CMOS、 NMOS　and PMOS Inverter Circuit VDD VDD CMOS Inverter PMOS Inverter VSS VSS Input Signal Input Signal VSS VDD VSS VDD VSS VDD VSS VDD VSS VDD Output Waveform Output Waveform VtQ4 Q1 Q2 Q3 Q4 Threshold voltage of Q4 Rail-to-Rail O