SiC SBD基温度传感器灵敏度影响因素研究.docVIP

SiC SBD基温度传感器灵敏度影响因素研究 　　摘 要： SiC基温度传感器由于可以实现比Si基温度传感器高得多的工作温度而备受重视。从理论和实验两方面研究影响SiC SBD基温度传感器灵敏度的因素。基于热电子发射理论的解析模型表明影响温度传感器灵敏度的因素主要是理想因子。采用Spice仿真不同偏置电流下SiC SBD的V?T关系，结果表明灵敏度随着正向电流的减小而增大并且线性度良好。采用10 mA的恒流源偏置电路测试了三个厂商的SiC SBD的V?T特性，结果发现三种SiC SBD测温上限均高于400 ℃，并且线性度较好，灵敏度均接近1.5 mV/℃。最后对提高SiC SBD基温度传感器的灵敏度提出了优化设计方案。 　　关键词： SiC基温度传感器; 肖特基势垒二极管; V?T特性; 偏置电路; 线性度; 灵敏度 　　中图分类号： TN850.1?34 文献标识码： A 文章编号： 1004?373X（2018）10?0070?04 　　Abstract： The SiC?based temperature sensor receives great attention as it can realize much higher work temperature than the Si?based temperature sensor. The sensitivity influencing factors of the SiC SBD based temperature sensor are studied theoretically and experimentally. The analytical model based on the thermionic emission theory shows that the sensitivity influencing factors of the temperature sensor are mainly ideal factors. The Spice is adopted to simulate the V?T relationship of SiC SBD at different bias currents. The results show that the sensitivity increases as the forward current decreases， and the linearity is good. The bias circuit with 10 mA constant current source is adopted to test the V?T feature of three manufactures′ SiC SBDs. The results show that the upper temperature limits measured by the three SiC SBDs are all higher than 400 ℃， the linearity is good， and the sensitivity is close to 1.5 mV/°C. At last， an optimization design scheme for improving the sensitivity of SiC SBD based temperature sensor is proposed. 　　Keywords： SiC?based temperature sensor; SBD; V?T feature; bias circuit; linearity; sensitivity 0 引 言 　　?囟却?感器作为最基本的传感器类型之一，被广泛应用到家电、工业、科学研究等多个领域中。常用的温度传感器有热电偶、热敏电阻、基于半导体的温度传感器等[1?2]，这几种常见的传感器的典型特性比较如表1所示。其中热电偶测温范围宽但是灵敏度较低，一般仅为40 μV/℃。热敏电阻虽然灵敏度高，但它是非线性元件，而半导体温度传感器具有灵敏度高、线性度好、体积小、功耗低、工作电流小等诸多优点而成为首选。但由于材料特性的限制，传统半导体材料制作的温度传感器工作温度上限约为150 ℃，限制了它的适用范围。 　　碳化硅（SiC）作为新型半导体材料，具有禁带宽、热导率高、高击穿场强、抗辐射能力强、化学性质稳定等优点。用SiC制作的温度传感器在高温恶劣环境下具有比Si基传感器更大的优势。J.F. Casady等报道的混合6H?SiC温度传