“薄基区-缓冲层-透明阳极”RSD结构机理研究微电子学与固体电子学专业论文.docxVIP

华中科技大学硕士学位论文 华 中 科 技 大 学 硕 士 学 位 论 文 II II Abstract Reversely Switched Dynistor (RSD) is a unique type of high power and microsecond solid switch based on the theory of controlled plasma. Because of the application of reversibly injection control, its recombination time is microsecond and its power is up to hundred megawatts or even more . The main advantages of this switch are: long lifetime, good stability, low cost, and respectively simple technology of manufacturing. Since RSD can achieve the great traits of conducting in microseconds or nanoseconds and having several hundreds of kA current, several tens of kV large voltage at the same time, it is one of the ideal switches in modern pulsed power system. It has been shown that RSD can conduct over the whole device uniformly and simultaneously, which improves the current capacity. So RSD is a very promising device for application in pulsed power technology. This thesis firstly introduces the basic triggering circuit and its operation theory, which includes pre-charge process and turn-on process. Then the critical conditions are presented. The conversion characteristics of RSD with the structure of “thin-base, buffer and transparent anode” is discussed particularly from the performance of turn-on, forward-block and turn-off process. The results obtained show that this new structure can have a good trade off among conducting, turning-off and switching characteristics. Then, on the basic of Grekhov’s model, the influence of the buffer on pre-charge process and blocking voltage is also investigated through calculating, deducing,and simulating by Matlab. It is proven that this new structure benefits for the repetitive pulsed power application. After that, with the help of PISCES-Ⅱ,a kind of semiconductor device’s emulating software, the conclution of above paragraphs are validated. The result of simulaton agrees the correlation theory and experiment well. Two experimental projects are carri